january 2006 FDMA420NZ single n-channel 2. 5v specified powertrench ? mosfet ?2006 fairchild semiconductor corporation FDMA420NZ rev b www.fairchildsemi.com 1 FDMA420NZ single n-channel 2.5v specified powertrench ? mosfet 20v, 5.7a, 30 m ? general description this single n-channel mosfet has been designed using fairchild semiconductor?s advanced power trench process to optimize the r ds (on) @v gs =2.5v on special microfet leadframe. applications ? li-lon battery pack features ? r ds(on) = 30m ? @ v gs = 4.5 v, i d = 5.7a ? r ds(on) = 40m ? @ v gs = 2.5 v, i d = 5.0a ? low profile-0.8mm maximum-in the new package microfet 2x2 mm ? rohs compliant absolute maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain-source voltage 20 v v gss gate-source voltage 12 v i d drain current -continuous (note 1a) -pulsed 5.7 a 24 p d power dissipation (steady state) (note 1a) (note 1b) 0.9 w 2.4 t j , t stg operating and storage junction temperature range -55 to +150 o c r ja thermal resistance, junction-to-ambient (note 1a) 145 o c/w r ja thermal resistance, junction-to-ambient (note 1b) 52 device marking device reel size tape width quantity 420 FDMA420NZ 7? 12mm 3000 units 5 1 6 2 3 4 d d s d d g bottom drain contact
FDMA420NZ single n-channel 2. 5v specified powertrench ? mosfet FDMA420NZ rev b www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain-source breakdown voltage v gs = 0v , i d = 250 a 20 v ? b vdss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 12 mv/ c i dss zero gate voltage drain current v ds = 16v, v gs = 0v, 1 a i gss gate-body leakage v gs = 12v, v ds = 0v 10 a on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 0.6 0.83 1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -3.1 mv/ c r ds(on) static drain-source on-resistance v gs = 4.5v, i d = 5.7a 16.8 30 m ? v gs = 4.0v, i d = 5.7a 17.3 31 v gs = 3.1v, i d = 5.0a 18.9 33 v gs = 2.5v, i d = 5.0a 21.2 40 v gs = 4.5v, i d = 5.7a, t j =150c 24.8 44 g fs forward transconductance v ds = 5v, i d = 5.7a 28.3 s (note 2) dynamic characteristics c iss input capacitance v ds = 10v, v gs = 0v, f = 1.0mhz 701 935 pf c oss output capacitance 163 220 pf c rss reverse transfer capacitance 125 190 pf r g gate resistance 1.92 ? switching characteristics (note 2) t d(on) turn-on delay time v dd = 10v, i d = 1a v gs = 4.5v, r gen = 6 ? 9.8 20 ns t r turn-on rise time 8.6 18 ns t d(off) turn-off delay time 21.5 43 ns t f turn-off fall time 8.6 18 ns q g total gate charge v ds = 10v, i d = 5.7a, v gs = 4.5v 8.8 12 nc q gs gate-source charge 0.9 2 nc q gd gate-drain charge 2.4 4 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 2.0 a v sd drain-source diode forward voltage v gs = 0v, i s = 2.0a 0.69 1.2 v t rr diode reverse recovery time i f = 5.7a, di/dt = 100a/ s 20 ns q rr diode reverse recovery charge 5 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. a. 145c/w when mounted on a minimum pad of 2 oz copper. b . 52c/w when mounted on a 1 in 2 pad of 2 oz copper. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. the diode connected between the gate and the source serves only as proection against esd. no gate overvoltage rating is implied .
FDMA420NZ single n-channel 2. 5v specified powertrench ? mosfet FDMA420NZ rev b www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 01234 0 5 10 15 20 25 30 35 40 45 50 v gs = 4.5v v gs = 3.5v v gs = 2.5v v gs = 2.0v v gs = 1.5v v gs = 3.0v pulse duration = 300 s duty cycle = 2.0%max i d , drain current (a) v ds , drain-source voltage (v) on region characteristics figure 2. 10 20 30 40 50 0.9 1.2 1.5 1.8 2.1 v gs = 4.5v v gs = 3.5v v gs = 3.0v v gs = 2.5v v gs = 2.0v pulse duration = 300 s duty cycle = 2.0%max normalized drain to source on-resistance i d , drain current(a) on-resistance vs drain current and gate voltage figure 3. -80 -40 0 40 80 120 160 0.6 0.8 1.0 1.2 1.4 1.6 t j , junction temperature ( o c ) normalized drain to source on-resistance i d = 5.7a v gs = 4.5v normalized on resistance vs junction temperature figure 4. 12345 10 20 30 40 50 60 i d = 2.8a t j = 25 o c t j = 125 o c pulse duration = 300 s duty cycle = 2.0%max v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m ? ) on-resistance vs ga te to source votlage figure 5. 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 t j = -55 o c t j = 25 o c t j = 125 o c pulse duration = 300 s duty cycle = 2.0%max i d , drain current (a) v gs , gate to source voltage (v) v ds = 5v transfer characteristics figure 6. 0.20.40.60.81.01.21.4 1e-4 1e-3 0.01 0.1 1 10 100 t j = 125 o c t j = -55 o c t j = 25 o c v gs = 0v v sd , body diode forward voltage (v) i s , reverse drain current (a) source to drain diode forward voltage vs source current
FDMA420NZ single n-channel 2. 5v specified powertrench ? mosfet FDMA420NZ rev b www.fairchildsemi.com 4 figure 7. gate charge characteri 024681012 0 1 2 3 4 5 v ds = 25v v ds = 20v v ds = 15v q g , gate charge(nc) v gs , gate to source voltage(v) stics figure 8. capacitance vs 0.1 1 10 100 1000 30 v ds , drain to source voltage (v) capacitance (pf) c rss c oss c iss f = 1mhz v gs = 0v 2000 50 drain to source voltage figure 9. forward bias 0.1 1 10 0.01 0.1 1 10 100 dc 10s 1s 100ms 10ms 1ms 100us 10us i d , drain current (a) v ds , drain to source voltage (v) single pulse t j =max rated t a = 25 o c operation in this area may be limited by r ds(on) 50 safe operating area figure 10. maximum cont inuous drain current vs ambient temperature 25 50 75 100 125 150 0 1 2 3 4 5 6 t a , ambient temperature ( o c ) i d , drain current (a) v gs = 2.5v v gs = 4.5v figure 11. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 v gs = 10v single pulse t, pulse width (s) p (pk) , peak transient power ( w ) 0.5 200 t a = 25 o c for temperatures above 25 o c derate peak current as follows: ii 25 = 150 t a ? 125 -------------------- - single pulse maximum power dissipation typical characteristics t j = 25c unless otherwise noted
FDMA420NZ single n-channel 2. 5v specified powertrench ? mosfet FDMA420NZ rev b www.fairchildsemi.com 5 figure 12. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-des c ending order normalized thermal impedance, z ja t, rectangular pulse duration(s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a r ja = 145 o c transient thermal response curve typical characteristics t j = 25c unless otherwise noted
FDMA420NZ single n-channel 2. 5v specified powertrench ? mosfet FDMA420NZ rev b www.fairchildsemi.com 6 notes: a. not fully conform to jedec registration mo-229 dated aug/2003. b. dimensions are in millimeters. c. dimensions and tolerances per asmey14.5m,1994 mlp06lreva dimensional outline and pad layout
FDMA420NZ rev b www.fairchildsemi.com 7 FDMA420NZ single n-channel 2.5v specified powertrench ? mosfet trademarks the following are registered and unregistered trademarks fairch ild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, functi on or design. fairchild does not assume any liability arising out of the appl ication or use of any product or circuit described herein; neither does it convey any lice nse under its patent rights, nor the rights of others. life support policy fairchild?s products are not auth orized for use as critical compon ents in life support devices or systems without the express wr itten approval of fairchil d semiconductor corporation. as used herein: 1. life support devices or sys tems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordanc e with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i17
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